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Impurities in Silicon Carbide (SiC)

Silicon Carbide (SiC) is a wide band gap semiconductor attracting great interest because it is expected to replace Si or GaAs in high-temperature, high-power, and high-frequency devices. Intrinsic defects and impurities in the crystal may create energy levels in the band gap and are therefore crucial for the functionality of any semiconductor device. Consequently, it is of high technological interest to establish a correlation between band gap states and a certain defect structure.

Within extensive studies in the last years, the electronic properties of transition metals in SiC were revealed by means of radiotracer Deep Level Spectroscopy (DLTS-RI). In each case a definite chemical assignment of band gap states was established and in some cases the defect structure could be clarified. The radiotracer DLTS experiments have lead to the most extensive and reliable dataset about impurity atoms in SiC available.
Silicon Carbide

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